dmn26d0udj document number: ds31481 rev. 5 - 2 1 of 5 www.diodes.com december 2010 ? diodes incorporated dmn26d0udj new product dual n-channel enhancement mode mosfet product summary v (br)dss r ds(on) i d t a = 25c 20v 3.0m @ v gs = 4.5v 240ma 6.0m @ v gs = 1.8v 170ma description and applications this new generation mosfet has been designed to minimize the on- state resistance (r ds(on) ) and yet maintain superior switching performance, making it ideal fo r high efficiency power management applications. ? dc-dc converters ? power management functions features and benefits ? dual n-channel mosfet ? low on-resistance: ? 3.0 @ 4.5v ? 4.0 @ 2.5v ? 6.0 @ 1.8v ? 10 @ 1.5v ? very low gate threshold voltage, 1.05v max ? low input capacitance ? fast switching speed ? ultra-small surface mount package ? esd protected gate (hbm 300v) ? lead, halogen, and antimony free by design/rohs compliant (note 1) ? "green" device (note 2) mechanical data ? case: sot-963 ? case material: molded plastic, ?green? molding compound. ul flammability classification rating 94v-0 ? moisture sensitivity: level 1 per j-std-020 ? terminal connections: see diagram ? terminals: finish ? matte ti n annealed over copper leadframe. solderable per mil-std-202, method 208 ? weight: 0.0027 grams (approximate) ordering information (note 3) part number case packaging DMN26D0UDJ-7 sot-963 10,000/tape & reel notes: 1. no purposefully added lead. 2. diodes inc.?s ?green? policy can be found on our website at http://www.diodes.com. 3. for packaging details, go to our website at http://www.diodes.com. marking information (note 4) notes: 4. package is non-polarized. parts may be on reel in orientation illustrated, 180 rotated, or mixed (both ways). sot-963 top view top view schematic and transistor diagram esd protected s 1 d 1 d 2 s 2 g 1 g 2 m1 = product type marking code s 1 d 1 d 2 s 2 g 1 g 2 m1
dmn26d0udj document number: ds31481 rev. 5 - 2 2 of 5 www.diodes.com december 2010 ? diodes incorporated dmn26d0udj new product maximum ratings @t a = 25c unless otherwise specified characteristic symbol value unit drain source voltage v dss 20 v gate-source voltage v gss 10 v continuous drain current (note 5) v gs = 4.5v steady state t a = 25c t a = 70c i d 240 190 ma continuous drain current (note 5) v gs = 1.8v steady state t a = 25c t a = 70c i d 180 140 ma pulsed drain current - t p = 10s i dm 805 ma thermal characteristics characteristic symbol value unit total power dissipation (note 5) p d 300 mw thermal resistance, junction to ambient (note 5) r ja 409 c/w operating and storage temperature range t j , t stg -55 to +150 c electrical characteristics @t a = 25c unless otherwise specified characteristic symbol min typ max unit test condition off characteristics (note 6) drain-source breakdown voltage bv dss 20 ? ? v v gs = 0v, i d = 100 a zero gate voltage drain current @ t c = 25c i dss ? ? 500 na v ds = 20v, v gs = 0v gate-body leakage i gss ? ? 1 100 a na v gs = 10v, v ds = 0v v gs = 5v, v ds = 0v on characteristics (note 6) gate threshold voltage v gs ( th ) 0.45 0.8 1.05 v v ds = v gs , i d = 250 a static drain-source on-resistance r ds (on) ? 1.8 3.0 v gs = 4.5v, i d = 100ma ? 2.5 4.0 v gs = 2.5v, i d = 50ma ? 3.4 6.0 v gs = 1.8v, i d = 20ma ? 4.7 10.0 v gs = 1.5v, i d = 10ma ? 9.5 ? v gs = 1.2v, i d = 1ma forward transconductance |y fs | 180 240 ? ms v ds =10v, i d = 0.1a source-drain diode forward voltage v sd 0.5 0.8 1.0 v v gs = 0v, i s = 10ma dynamic characteristics (note 7) input capacitance c iss ? 14.1 ? pf v ds = 15v, v gs = 0v f = 1.0mhz output capacitance c oss ? 2.9 ? pf reverse transfer capacitance c rss ? 1.6 ? pf switching characteristics, v gs = 4.5v (note 7) turn-on delay time t d ( on ) ? 3.8 ? ns v gs = 4.5v, v dd = 10v i d = 200ma, r g = 2.0 ? rise time t r ? 7.9 ? turn-off delay time t d ( off ) ? 13.4 ? fall time t f ? 15.2 ? notes: 5. device mounted on fr-4 pcb, 1 inch x 0.85 inch x 0.06 2 inch with minimum recommended pad layout; pad layout as shown on diodes inc. suggested pad layout document ap02001, which can be found on our website at http://www.diodes.com. 6. short duration pulse test used to minimize self-heating effect. 7. switching characteristics are independent of operating junction temperature. guaranteed by design, not subject to production testing.
dmn26d0udj document number: ds31481 rev. 5 - 2 3 of 5 www.diodes.com december 2010 ? diodes incorporated dmn26d0udj new product 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 00.511.5 22.53 fig. 1 typical output characteristic v , drain-source voltage (v) ds i, d r ain c u r r en t (a) d v = 2.0v gs v = 3.0v gs v = 4.5v gs v = 8v gs v = 2.5v gs v = 1.5v gs 0 0.1 0.2 0.3 0.4 0 0.5 1 1.5 2 2.5 3 fig. 2 typical transfer characteristic v , gate-source voltage (v) gs i, d r ai n c u r r e n t (a) d t = -55c a t = 25c a t = 85c a t = 125c a t = 150c a v = -10v ds 0 1 2 3 4 5 6 7 8 9 10 1 10 100 1,000 fig. 3 typical on-resistance vs. drain current and gate voltage i , drain-source current (ma) d r , drain-source on-resistance ( ) ds(on) v = 4.5v gs v = 1.2v gs v = 1.5v gs v = 2.5v gs v = 1.8v gs 0 1 2 3 4 0.01 0.1 1 i , drain current (a) d fig. 4 typical on-resistance vs. drain current and temperature r , d r ain-s o u r c e o n- r esis t an c e ( ) ds(on) t = -55c a t = 25c a t = 85c a t = 125c a t = 150c a v = 4.5v gs 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 fig. 5 on-resistance variation with temperature -50 -25 0 25 50 75 100 125 150 t , ambient temperature (c) a r , drain-source on-resistance (normalized) dson v = 2.5v i = 150ma gs d v = 4.5v i = 500ma gs d 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 r , d r ain-s o u r c e on-resistance ( ) dson fig. 6 on-resistance variation with temperature -50 -25 0 25 50 75 100 125 150 t , ambient temperature (c) a v = 4.5v i = 500ma gs d v = 2.5v i = 150ma gs d
dmn26d0udj document number: ds31481 rev. 5 - 2 4 of 5 www.diodes.com december 2010 ? diodes incorporated dmn26d0udj new product 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 fig. 7 gate threshold variation vs. ambient temperature -50 -25 0 25 50 75 100 125 150 t , ambient temperature (c) a v , gate threshold voltage (v) gs(th) i = 1ma d i = 250a d 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 fig. 8 diode forward voltage vs. current v , source-drain voltage (v) sd i, s o u r c e c u r r en t (a) s t = 25c a 0 5 10 15 20 0 5 10 15 20 fig. 9 typical total capacitance v , drain-source voltage (v) ds c , c a p a c i t a n c e (p f ) c iss c rss c oss f = 1mhz 0 2 4 6 8 10 12 14 16 18 20 fig. 10 typical leakage current vs. drain-source voltage v , drain-source voltage (v) ds 0.1 10 100 1,000 10,000 i, leaka g e c u r r e n t (na) dss 1 t = -55c a t = 25c a t = 85c a t = 125c a t = 150c a package outline dimensions sot-963 dim min max typ a 0.40 0.50 0.45 a1 0 0.05 - c 0.120 0.180 0.150 d 0.95 1.05 1.00 e 0.95 1.05 1.00 e1 0.75 0.85 0.80 l 0.05 0.15 0.10 b 0.10 0.20 0.15 e 0.35 typ e1 0.70 typ all dimensions in mm l c e d e1 e e1 b (6 places) a a1
dmn26d0udj document number: ds31481 rev. 5 - 2 5 of 5 www.diodes.com december 2010 ? diodes incorporated dmn26d0udj new product suggested pad layout important notice diodes incorporated makes no warranty of any kind, express or implied, with regards to this document, including, but not limited to, the implied warranties of merchantability and fitness for a particular purpose (and their equivalents under the laws of any jurisdiction). diodes incorporated and its subsidiaries rese rve the right to make modifications, enhanc ements, improvements, corrections or ot her changes without further notice to this document and any product descri bed herein. diodes incorporated does not assume any liability arising out of the application or use of this document or an y product described herein; neither does di odes incorporated convey any license under its patent or trademark rights, nor the rights of others. any customer or us er of this document or products described herein in such applica tions shall assume all risks of such use and will agree to hold diodes incorporated a nd all the companies whose products are represented on diodes incorporated website, harmless against all damages. diodes incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthoriz ed sales channel. should customers purchase or use diodes inco rporated products for any unintended or una uthorized application, customers shall i ndemnify and hold diodes incorporated and its representativ es harmless against all claims, damages, expenses, and attorney fees arising out of, directly or indirectly, any claim of personal injury or death a ssociated with such unintended or unauthorized application. products described herein may be covered by one or more united states, international or foreign patents pending. product names and markings noted herein may also be covered by one or more united states, international or foreign trademarks. life support diodes incorporated products are specifically not authorized for use as critical component s in life support devices or systems without the express written approval of the chief executive offi cer of diodes incorporated. as used herein: a. life support devices or syst ems are devices or systems which: 1. are intended to implant into the body, or 2. support or sustain life and whose failure to perform when proper ly used in accordance with instructions for use provided in the labeling can be reasonably expected to result in significant injury to the user. b. a critical component is any component in a life support dev ice or system whose failure to perform can be reasonably expect ed to cause the failure of the life support device or to affect its safety or effectiveness. customers represent that they have all necessary expertise in the safety and regulatory ramifi cations of their life support dev ices or systems, and acknowledge and agree that they are solely responsible for all legal, regulatory and safety-rel ated requirements concerning the ir products and any use of diodes incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or s ystems-related information or support that may be provided by diodes incorporated. further, customers must fully indemnify diodes incorporate d and its representatives against any damages arisi ng out of the use of diodes incorporated pr oducts in such safety-critical, life suppor t devices or systems. copyright ? 2010, diodes incorporated www.diodes.com dimensions value (in mm) c 0.350 x 0.200 y 0.200 y1 1.100 y1 y (6x) c c x (6x)
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